
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a low saturation voltage of 320mV and a minimum DC current gain (hFE) of 300. Operates across a wide temperature range from -55°C to 150°C, with a transition frequency of 100MHz. Packaged in a TO-236-3 case, supplied on a 3000-piece tape and reel.
Onsemi FSB619 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 320mV |
| Collector-emitter Voltage-Max | 320mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 50V |
| Weight | 0.03g |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FSB619 to view detailed technical specifications.
No datasheet is available for this part.
