The FSBM10SH60A is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi, featuring a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2.5V. It has a maximum collector-emitter voltage of 600V and can handle a current of 10A. The module is packaged in a lead-free, through-hole configuration and is compliant with RoHS regulations. It is available in a quantity of 48 per rail or tube packaging. The device is suitable for high-power applications and can dissipate a maximum power of 43W.
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Onsemi FSBM10SH60A technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 600V |
| Current | 10A |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Package Quantity | 48 |
| Packaging | Rail/Tube |
| Power Dissipation | 43W |
| RoHS Compliant | Yes |
| Series | SPM® |
| Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FSBM10SH60A to view detailed technical specifications.
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