N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 7A continuous drain current. This single element silicon transistor is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a low 28mΩ drain-source resistance at 10V, 750pF input capacitance at 10V, and 14nC gate charge. The plastic package measures 5mm x 4.4mm x 1.5mm, supporting a maximum power dissipation of 1800mW and operating temperatures from -55°C to 150°C.
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Onsemi FW502 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Dual Drain Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Drain Source Resistance | 28@10VmOhm |
| Typical Gate Charge @ Vgs | 14@10VnC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 750@10VpF |
| Maximum Power Dissipation | 1800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
No datasheet is available for this part.
