PNP Bipolar Junction Transistor (BJT) designed for low saturation applications. Features a maximum collector current of 3A and a collector-emitter voltage of 25V. Operates with a transition frequency of 100MHz and a minimum hFE of 100. Packaged in a SOT-223 surface-mount case, this RoHS compliant component offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-223
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Onsemi FZT749 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-35V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-300V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
600mV
Current Rating
-3A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Height
1.7mm
hFE Min
100
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
25V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-25V
Weight
0.188g
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FZT749 Datasheet
Download the complete datasheet for Onsemi FZT749 to view detailed technical specifications.
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