Single-phase bridge rectifier diode with a maximum repetitive reverse voltage of 200V and an average rectified current of 4A. Features a 4-pin SIP package for through-hole mounting, a maximum forward surge current of 150A, and a power dissipation of 8W. Operating temperature range spans from -55°C to 150°C. This RoHS compliant component offers a low reverse leakage current of 5uA and a capacitance of 200pF.
PackageSIP
Capacitance200pF
MountingThrough Hole
Power8W
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Technical Specifications
Onsemi GBU4D technical specifications.
General
| Average Rectified Current | 4A |
| Capacitance | 200pF |
| Package/Case | SIP |
| Forward Current | 4A |
| Height | 18.8mm |
| Lead Free | Lead Free |
| Length | 22.3mm |
| Max Forward Surge Current (Ifsm) | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Surge Current | 150A |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Current | 4A |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Peak Non-Repetitive Surge Current | 150A |
| Power Dissipation | 8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Weight | 5.4g |
| Width | 3.56mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi GBU4D Datasheet
Download the complete datasheet for Onsemi GBU4D to view detailed technical specifications.
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