The GBU8KS is a bridge rectifier diode from Onsemi, featuring a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum power dissipation of 16 watts and a breakdown voltage of 800 volts. The diode is made of silicon and has a single terminal position. It is designed for use in bridge rectifier applications.
Quick Jump:
Technical Specifications
Onsemi GBU8KS technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
| Power Dissipation-Max | 16 |
Compliance
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi GBU8KS Datasheet
Download the complete datasheet for Onsemi GBU8KS to view detailed technical specifications.
No datasheet is available for this part.