
Bridge Rectifier Diode, single phase, 1kV repetitive reverse voltage, 8A average rectified current. Features 200A peak non-repetitive surge current, 16W power dissipation, and 50µA max reverse leakage current. Operates from -55°C to 150°C. Through-hole mounting in a 4-pin SIP package.
Onsemi GBU8M technical specifications.
| Average Rectified Current | 8A |
| Package/Case | SIP |
| Current Rating | 8A |
| Forward Current | 8A |
| Height | 18.8mm |
| Lead Free | Lead Free |
| Length | 22.3mm |
| Max Forward Surge Current (Ifsm) | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Max Reverse Current | 50uA |
| Max Reverse Leakage Current | 50uA |
| Max Surge Current | 200A |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Current | 8A |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Peak Non-Repetitive Surge Current | 200A |
| Power Dissipation | 16W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| DC Rated Voltage | 1kV |
| Weight | 5.4g |
| Width | 3.56mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi GBU8M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
