The H22A2 phototransistor has a collector-emitter breakdown voltage of 30V and a maximum operating temperature of 100°C. It is designed for through hole mounting with flanges and has a power dissipation of 150mW. The device is rated for a maximum operating temperature of 100°C and a minimum operating temperature of -55°C. It is not RoHS compliant.
MountingThrough Hole, Flanges
Power150mW
Quick Jump:
Technical Specifications
Onsemi H22A2 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 60mA |
| Input Current | 60mA |
| Lead Free | Lead Free |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole, Flanges |
| Operating Supply Voltage | 1.7V |
| Output Configuration | Phototransistor |
| Output Voltage | 30V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Response Time | 50us |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi H22A2 Datasheet
Download the complete datasheet for Onsemi H22A2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
