The H22B1 is a single-element transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 40mA. It operates over a temperature range of -55°C to 100°C and has a power dissipation of 150mW. The device is packaged in a through-hole package with flanges and is lead-free. It is not RoHS compliant and does not meet the requirements of the Restriction of Hazardous Substances (RoHS) directive.
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Onsemi H22B1 technical specifications.
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Input Current | 7.5mA |
| Lead Free | Lead Free |
| Max Collector Current | 40mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole, Flanges |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150mW |
| Reach SVHC Compliant | No |
| Response Time | 45us |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage (DC) | 6V |
| RoHS Compliant | No |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
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