Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV collector-emitter breakdown voltage and a 2.5V maximum collector-emitter voltage. This NPT IGBT offers a continuous collector current of 55A and a maximum collector current of 35A, with a low collector-emitter saturation voltage of 2.7V. Designed for high-power applications, it boasts a maximum power dissipation of 312W and operates across a wide temperature range from -55°C to 150°C. The component is housed in a TO-263AB package, supporting both through-hole and surface mount configurations, and is RoHS compliant.
PackageTO-263AB
Voltage1.2kV
Current35A
Current Rating35A
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Technical Specifications
Onsemi HGT1S10N120BNS technical specifications.
General
| Package/Case | TO-263AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 55A |
| Current | 35A |
| Current Rating | 35A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HGT1S10N120BNS |
| Voltage | 1.2kV |
| DC Rated Voltage | 1.2kV |
| Weight | 0.046296oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGT1S10N120BNS Datasheet
Download the complete datasheet for Onsemi HGT1S10N120BNS to view detailed technical specifications.
No datasheet is available for this part.
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