N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 1.2kV collector-emitter breakdown voltage and a continuous collector current of 55A, with a rated current of 35A. Offers a maximum power dissipation of 298W and a low collector-emitter saturation voltage of 2.7V. Packaged in a TO-263AB (D2PAK) case, this RoHS compliant component operates from -55°C to 150°C and is supplied on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi HGT1S10N120BNST datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi HGT1S10N120BNST technical specifications.
| Package/Case | TO-263AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 55A |
| Current Rating | 35A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
| Weight | 1.31247g |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HGT1S10N120BNST to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
