N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 1.2kV collector-emitter breakdown voltage and a continuous collector current of 55A, with a rated current of 35A. Offers a maximum power dissipation of 298W and a low collector-emitter saturation voltage of 2.7V. Packaged in a TO-263AB (D2PAK) case, this RoHS compliant component operates from -55°C to 150°C and is supplied on tape and reel.
PackageTO-263AB
Current Rating35A
MountingSurface Mount
Power298W
Quick Jump:
Technical Specifications
Onsemi HGT1S10N120BNST technical specifications.
General
Package/Case
TO-263AB
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.7V
Continuous Collector Current
55A
Current Rating
35A
Height
4.83mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Breakdown Voltage
1.2kV
Max Collector Current
35A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
298W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Power Dissipation
298W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
1.2kV
Weight
1.31247g
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGT1S10N120BNST Datasheet
Download the complete datasheet for Onsemi HGT1S10N120BNST to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
