N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 1.2kV collector-emitter breakdown voltage and a continuous collector current of 55A, with a rated current of 35A. Offers a maximum power dissipation of 298W and a low collector-emitter saturation voltage of 2.7V. Packaged in a TO-263AB (D2PAK) case, this RoHS compliant component operates from -55°C to 150°C and is supplied on tape and reel.
PackageTO-263AB
Current Rating35A
MountingSurface Mount
Power298W
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Technical Specifications
Onsemi HGT1S10N120BNST technical specifications.
General
| Package/Case | TO-263AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 55A |
| Current Rating | 35A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 298W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGT1S10N120BNST Datasheet
Download the complete datasheet for Onsemi HGT1S10N120BNST to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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