The HGT1S14N36G3VLS is an insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 390V and a maximum collector current of 18A. It is packaged in a TO-263AB surface mount package and is compliant with RoHS regulations. The device has a maximum power dissipation of 100W and can operate within a temperature range of -40°C to 175°C.
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| Package/Case | TO-263AB |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.25V |
| Collector Emitter Voltage (VCEO) | 330V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 18A |
| Lead Free | Lead Free |
| Max Collector Current | 18A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 380V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HGT1S14N36G3VLS to view detailed technical specifications.
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