The HGT1S14N36G3VLT is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 390V and a collector-emitter saturation voltage of 1.6V. It has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. The device is packaged in a TO-262-3 package and is available in a lead-free version. The transistor is RoHS compliant and has a maximum power dissipation of 100W.
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| Package/Case | TO-262-3 |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 330V |
| Collector-emitter Voltage-Max | 2.2V |
| Current Rating | 18A |
| Lead Free | Lead Free |
| Max Collector Current | 18A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 380V |
| RoHS | Compliant |
