N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 5.3A. Offers a maximum power dissipation of 60W and a low collector-emitter saturation voltage of 2.5V. Packaged in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. RoHS compliant with a maximum operating temperature of 150°C.
PackageTO-252AA
Current Rating5.3A
MountingSurface Mount
Power60W
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Technical Specifications
Onsemi HGTD1N120BNS9A technical specifications.
General
| Package/Case | TO-252AA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.9V |
| Current Rating | 5.3A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 5.3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1.2kV |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTD1N120BNS9A Datasheet
Download the complete datasheet for Onsemi HGTD1N120BNS9A to view detailed technical specifications.
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