Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV Collector-Emitter Breakdown Voltage and 54A Max Collector Current. This NPT IGBT offers a 2.45V Collector-Emitter Saturation Voltage and 390W Max Power Dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C and boasts a 75ns reverse recovery time. This RoHS compliant component is supplied in a rail/tube package.
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Onsemi HGTG18N120BND technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 54A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 54A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 390W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 75ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 170us |
| Turn-On Delay Time | 23us |
| DC Rated Voltage | 1.2kV |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
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