Insulated Gate Bipolar Transistor (IGBT) featuring a 1.2kV Collector-Emitter Breakdown Voltage and 54A Max Collector Current. This NPT IGBT offers a 2.45V Collector-Emitter Saturation Voltage and 390W Max Power Dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -55°C to 150°C and boasts a 75ns reverse recovery time. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-247
Current Rating54A
MountingThrough Hole
Power390W
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Technical Specifications
Onsemi HGTG18N120BND technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.7V
Current Rating
54A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
54A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
390W
Mount
Through Hole
Package Quantity
150
Packaging
Rail/Tube
Power Dissipation
390W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
75ns
RoHS Compliant
Yes
Turn-Off Delay Time
170us
Turn-On Delay Time
23us
DC Rated Voltage
1.2kV
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG18N120BND Datasheet
Download the complete datasheet for Onsemi HGTG18N120BND to view detailed technical specifications.
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