Insulated Gate Bipolar Transistor (IGBT) chip featuring 600V Collector Emitter Breakdown Voltage and 70A Max Collector Current. This N-channel IGBT offers a low Collector Emitter Saturation Voltage of 1.8V and a Max Power Dissipation of 290W. Packaged in a TO-247 case with through-hole mounting, it operates between -55°C and 150°C. Turn-on delay is 15ns with a turn-off delay of 73ns. RoHS compliant and lead-free.
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Onsemi HGTG20N60A4 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 70A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HGTG20N60A4 to view detailed technical specifications.
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