Insulated Gate Bipolar Transistor (IGBT) chip featuring 600V Collector Emitter Breakdown Voltage and 70A Max Collector Current. This N-channel IGBT offers a low Collector Emitter Saturation Voltage of 1.8V and a Max Power Dissipation of 290W. Packaged in a TO-247 case with through-hole mounting, it operates between -55°C and 150°C. Turn-on delay is 15ns with a turn-off delay of 73ns. RoHS compliant and lead-free.
PackageTO-247
Current Rating70A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi HGTG20N60A4 technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Current Rating
70A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
290W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
290W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
73ns
Turn-On Delay Time
15ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG20N60A4 Datasheet
Download the complete datasheet for Onsemi HGTG20N60A4 to view detailed technical specifications.
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