N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A. Offers a low collector-emitter saturation voltage of 1.8V and a maximum power dissipation of 463W. Packaged in a TO-247 through-hole mount with a 3-pin configuration. RoHS compliant with a maximum operating temperature of 150°C.
PackageTO-247
Current Rating75A
MountingThrough Hole
Power463W
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Technical Specifications
Onsemi HGTG30N60A4 technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Continuous Collector Current
75A
Current Rating
75A
Height
20.82mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
463W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
463W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
25ns
DC Rated Voltage
600V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi HGTG30N60A4 Datasheet
Download the complete datasheet for Onsemi HGTG30N60A4 to view detailed technical specifications.
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