N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A. Offers a low collector-emitter saturation voltage of 1.8V and a maximum power dissipation of 463W. Packaged in a TO-247 through-hole mount with a 3-pin configuration. RoHS compliant with a maximum operating temperature of 150°C.
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Onsemi HGTG30N60A4 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Continuous Collector Current | 75A |
| Current Rating | 75A |
| Height | 20.82mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 463W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 463W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
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