600V, 60A Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 1.45V collector-emitter saturation voltage and 208W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes a 55ns reverse recovery time and 36ns turn-on delay. Packaged in TO-247, this RoHS compliant component is supplied in tubes of 150 units.
Checking distributor stock and pricing after the page loads.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 60A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 137ns |
| Turn-On Delay Time | 36ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
| RoHS | Compliant |
These are design resources that include the Onsemi HGTG30N60B3D
onsemi product discontinuance notice PD23762Z for various standard parts. Last time buy date is July 29, 2021, and last ship date is January 29, 2022.
