600V, 60A Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 1.45V collector-emitter saturation voltage and 208W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes a 55ns reverse recovery time and 36ns turn-on delay. Packaged in TO-247, this RoHS compliant component is supplied in tubes of 150 units.
PackageTO-247
Current Rating60A
MountingThrough Hole
Power208W
Quick Jump:
Technical Specifications
Onsemi HGTG30N60B3D technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 60A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 137ns |
| Turn-On Delay Time | 36ns |
| DC Rated Voltage | 600V |
| Weight | 6.39g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTG30N60B3D Datasheet
Download the complete datasheet for Onsemi HGTG30N60B3D to view detailed technical specifications.
No datasheet is available for this part.
Product Images
