High-performance NPT Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. Features a 1200V collector-emitter voltage (VCEO) and a continuous collector current rating of 35A. Offers a low collector-emitter saturation voltage of 2.45V and a maximum power dissipation of 298W. Packaged in a TO-220AB through-hole mount for easy integration. This lead-free and RoHS compliant component operates across a wide temperature range from -55°C to 150°C.
PackageTO-220AB
Current Rating35A
MountingThrough Hole
Power298W
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Technical Specifications
Onsemi HGTP10N120BN technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 35A |
| Current Rating | 35A |
| Height | 9.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 35A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49.2W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 298W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HGTP10N120BN |
| DC Rated Voltage | 1.2kV |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTP10N120BN Datasheet
Download the complete datasheet for Onsemi HGTP10N120BN to view detailed technical specifications.
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