N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 70A. Boasts a low collector-emitter saturation voltage of 1.8V and a maximum power dissipation of 290W. Packaged in a TO-220AB through-hole mount with a 3-pin configuration, this RoHS compliant component operates from -55°C to 150°C. Includes fast switching speeds with a turn-on delay of 15ns and a turn-off delay of 73ns.
PackageTO-220AB
Current Rating70A
MountingThrough Hole
Power290W
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Technical Specifications
Onsemi HGTP20N60A4 technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Continuous Collector Current | 70A |
| Current Rating | 70A |
| Height | 9.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 290W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTP20N60A4 Datasheet
Download the complete datasheet for Onsemi HGTP20N60A4 to view detailed technical specifications.
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