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Technical Specifications
Onsemi HGTP3N60A4D technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 17A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reverse Recovery Time | 19ns |
| RoHS Compliant | Yes |
| Series | HGTP3N60 |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HGTP3N60A4D Datasheet
Download the complete datasheet for Onsemi HGTP3N60A4D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.