The HGTP3N60A4D is a 600V insulated gate bipolar transistor with a maximum collector current of 17A and a maximum power dissipation of 70W. It is packaged in a TO-220AB package and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The HGTP3N60A4D is part of the HGTP3N60 series of IGBTs from Onsemi.
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Onsemi HGTP3N60A4D technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 17A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Reverse Recovery Time | 19ns |
| RoHS Compliant | Yes |
| Series | HGTP3N60 |
| DC Rated Voltage | 600V |
| Weight | 1.8g |
| RoHS | Compliant |
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