The HUF75531SK8T is an N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.5W and a drain to source breakdown voltage of 80V. The device is lead-free and RoHS compliant, packaged in a tape and reel with 2500 units per reel. It features a surface mount package and an input capacitance of 1.21nF.
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Onsemi HUF75531SK8T technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.21nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 49ns |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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