N-Channel UltraFET Power MOSFET featuring 80V drain-source breakdown voltage and 75A continuous drain current. This through-hole component offers a low 10mΩ maximum drain-source on-resistance and 270W maximum power dissipation. Operating from -55°C to 175°C, it boasts fast switching speeds with a 14ns turn-on delay and 90ns fall time. Packaged in TO-220AB, this RoHS compliant device is ideal for high-power applications.
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Onsemi HUF75545P3 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 10mR |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.3mm |
| Input Capacitance | 3.75nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 270W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 14ns |
| Voltage | 80V |
| DC Rated Voltage | 80V |
| Width | 4.7mm |
| RoHS | Compliant |
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