The HUF76131SK8T is a N-channel MOSFET with a continuous drain current of 10A and a drain to source breakdown voltage of 30V. It features a drain to source resistance of 17mR and a gate to source voltage of 20V. The device is packaged in a SOP package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a power dissipation of 2.5W.
PackageSOP
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi HUF76131SK8T technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUF76131SK8T Datasheet
Download the complete datasheet for Onsemi HUF76131SK8T to view detailed technical specifications.
No datasheet is available for this part.
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