N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 47A continuous drain current. This through-hole component offers a low 22mΩ Rds On resistance and 110W maximum power dissipation, packaged in a TO-220AB case. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 74ns fall time and 30ns turn-off delay.
Onsemi HUF76429P3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 47A |
| Current | 55A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 74ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 30ns |
| Voltage | 60V |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
No datasheet is available for this part.
