N-Channel Logic Level UltraFET Power MOSFET featuring 100V drain-source breakdown voltage and 10A continuous drain current. Offers a low 160mΩ maximum drain-source on-resistance. Designed for surface mounting in a TO-252AA package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 49W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 28ns.
Onsemi HUF76609D3ST technical specifications.
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 160mR |
| Element Configuration | Single |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 425pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 49W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 100V |
| Weight | 0.26037g |
| RoHS | Compliant |
No datasheet is available for this part.
