N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 56A continuous drain current. This UltraFET™ device offers a low 25mΩ drain-source on-resistance and 200W maximum power dissipation. Designed for surface mounting in a TO-263AB package, it operates from -55°C to 175°C and is supplied on an 800-piece tape and reel. Key switching characteristics include a 15ns turn-on delay, 20ns turn-off delay, and 25ns fall time.
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Onsemi HUFA75639S3ST technical specifications.
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 56A |
| Current Rating | 56A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
| Width | 9.65mm |
| RoHS | Compliant |
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