N-channel enhancement mode power MOSFET featuring a 150V drain-source voltage and 75A continuous drain current. This through-hole component is housed in a TO-247 package with a 3-pin configuration and tab. It offers a low drain-source on-resistance of 16mΩ at 10V and a maximum power dissipation of 500W. Operating temperature range is -55°C to 175°C.
PackageTO-247
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi HUFA75852G3-F085 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.62 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 20.57 |
| Seated Plane Height (mm) | 24.38 |
| Pin Pitch (mm) | 5.56 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 150V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 16@10VmOhm |
| Typical Gate Charge @ Vgs | 400@20V|215@10VnC |
| Typical Gate Charge @ 10V | 215nC |
| Typical Input Capacitance @ Vds | 7690@25VpF |
| Maximum Power Dissipation | 500000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| PPAP | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi HUFA75852G3-F085 Datasheet
Download the complete datasheet for Onsemi HUFA75852G3-F085 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.