60V N-Channel MOSFET, 2.5W power dissipation, featuring 3.5A continuous drain current and 75mΩ drain-source resistance. This surface mount device in an 8-SOIC package offers a 60V drain-to-source breakdown voltage and a 16V gate-to-source voltage. With a 330pF input capacitance and turn-off delay of 46ns, it is suitable for applications requiring efficient switching. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi HUFA76407DK8T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 46ns |
| DC Rated Voltage | 60V |
| Weight | 0.2304g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA76407DK8T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
