60V N-Channel MOSFET, 2.5W power dissipation, featuring 3.5A continuous drain current and 75mΩ drain-source resistance. This surface mount device in an 8-SOIC package offers a 60V drain-to-source breakdown voltage and a 16V gate-to-source voltage. With a 330pF input capacitance and turn-off delay of 46ns, it is suitable for applications requiring efficient switching. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOIC
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi HUFA76407DK8T technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 31ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 46ns |
| DC Rated Voltage | 60V |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76407DK8T Datasheet
Download the complete datasheet for Onsemi HUFA76407DK8T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.