Dual N-Channel MOSFET, Logic Level, UltraFET™ technology, designed for automotive applications. Features a 60V drain-source breakdown voltage and a low 49mΩ drain-source resistance at 10V Vgs. With a continuous drain current of 5.1A and a maximum power dissipation of 2.5W, this surface-mount SO package component offers fast switching speeds with turn-on delay of 10ns and fall time of 27ns. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
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Onsemi HUFA76413DK8T_F085 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 27ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.2304g |
| RoHS | Compliant |
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