N-channel MOSFET, 100V drain-source voltage, featuring 38A continuous drain current and 145W maximum power dissipation. Surface mount TO-263-3 package with 29mΩ drain-source resistance at 10V. Operates from -55°C to 175°C, with 83ns fall time and 63ns turn-off delay. Lead-free and RoHS compliant.
PackageTO-263-3
Current Rating38A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA76633S3S technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 39A |
| Current Rating | 38A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 145W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 145W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 63ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76633S3S Datasheet
Download the complete datasheet for Onsemi HUFA76633S3S to view detailed technical specifications.
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