
N-Channel Logic Level MOSFET, 100V Drain-Source Breakdown Voltage, 75A Continuous Drain Current, and 15mΩ Max Drain-Source On-Resistance. This single-element transistor features a TO-263-3 surface mount package, 310W maximum power dissipation, and operates from -55°C to 175°C. Designed for automotive applications with AEC-Q101 qualification, it offers a 175ns fall time and 69ns turn-off delay time. Packaged in an 800-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi HUFA76645S3ST-F085 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15mR |
| Element Configuration | Single |
| Fall Time | 175ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 4.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, UltraFET™ |
| Turn-Off Delay Time | 69ns |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA76645S3ST-F085 to view detailed technical specifications.
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