N-channel MOSFET with 100V drain-source breakdown voltage and 14A continuous drain current. Features 110mΩ maximum drain-source on-resistance and 55W maximum power dissipation. Operates across a -55°C to 175°C temperature range, housed in a TO-220AB through-hole package. Includes 13ns turn-on delay and 36ns fall time.
Onsemi IRF530A technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 110MR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 0uV |
| Height | 9.4mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
