The IRF530N_R4942 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 85W and a continuous drain current of 10A. The device is packaged in a TO-252-3 package and is rated for a DC voltage of 100V. The MOSFET has a drain to source breakdown voltage of 100V and a drain to source resistance of 64mR.
Onsemi IRF530N_R4942 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.035nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 47ns |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
No datasheet is available for this part.
