IRF540A

100V 28A N-CH MOSFET TO-220 52mR RdsOn

N-channel MOSFET in a TO-220 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 28A. Offers a low on-resistance of 52mR at a nominal gate-source voltage of 4V. Maximum power dissipation is 107W, with operating temperatures ranging from -55°C to 175°C. Includes a fall time of 56ns and a turn-off delay time of 90ns.

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power107W

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Technical Specifications

Onsemi IRF540A technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	28A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	52mR
Drain to Source Voltage (Vdss)	100V
Dual Supply Voltage	100V
Fall Time	56ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.71nF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	107W
Mount	Through Hole
Nominal Vgs	4V
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	107W
Rds On Max	52mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	Through Hole
Turn-Off Delay Time	90ns
Width	10.67mm