N-channel MOSFET in a TO-220 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 28A. Offers a low on-resistance of 52mR at a nominal gate-source voltage of 4V. Maximum power dissipation is 107W, with operating temperatures ranging from -55°C to 175°C. Includes a fall time of 56ns and a turn-off delay time of 90ns.
Sign in to ask questions about the Onsemi IRF540A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi IRF540A technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 90ns |
| Width | 10.67mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi IRF540A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
