The IRF634B_FP001 is a TO-220 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 8.1A and a drain to source breakdown voltage of 250V. The device features a drain to source resistance of 450mR and a maximum power dissipation of 74W. It is RoHS compliant and suitable for through hole mounting.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power74W
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Technical Specifications
Onsemi IRF634B_FP001 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 15ns |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRF634B_FP001 Datasheet
Download the complete datasheet for Onsemi IRF634B_FP001 to view detailed technical specifications.
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