
N-CHANNEL MOSFET, single element, TO-220 package, designed for through-hole mounting. Features a 250V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 14A. Offers a low drain-source on-resistance of 280mR at a nominal Vgs of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 139W. Includes fast switching characteristics with a turn-on delay time of 20ns and a fall time of 95ns. RoHS compliant and lead-free.
Onsemi IRF644B_FP001 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 280mR |
| Fall Time | 95ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 20ns |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi IRF644B_FP001 to view detailed technical specifications.
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