N-CHANNEL MOSFET, single element, TO-220 package, designed for through-hole mounting. Features a 250V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 14A. Offers a low drain-source on-resistance of 280mR at a nominal Vgs of 4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 139W. Includes fast switching characteristics with a turn-on delay time of 20ns and a fall time of 95ns. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power139W
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Technical Specifications
Onsemi IRF644B_FP001 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
280mR
Fall Time
95ns
Gate to Source Voltage (Vgs)
30V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
139W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
139W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
20ns
Weight
1.8g
Compliance
RoHS
Compliant
Datasheet
Onsemi IRF644B_FP001 Datasheet
Download the complete datasheet for Onsemi IRF644B_FP001 to view detailed technical specifications.
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