N-channel MOSFET with 500V drain-source breakdown voltage and 8A continuous drain current. Features a TO-220 package for through-hole mounting, 650mΩ drain-source resistance, and 134W maximum power dissipation. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes 75ns fall time and 125ns turn-off delay time.
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Onsemi IRF840B technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 134W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 134W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 125ns |
| Width | 10.67mm |
| RoHS | Compliant |
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