N-Channel Power MOSFET, A-FET technology, featuring a 100V drain-source breakdown voltage and a continuous drain current of 2.3A. This single-element transistor offers a maximum drain-source on-resistance of 200mΩ. Designed for surface mounting in a SOT-223 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.4W. Key switching characteristics include a turn-on delay time of 14ns and a fall time of 28ns.
Onsemi IRFM120ATF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | 2.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 200MR |
| Element Configuration | Single |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.4W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 100V |
| Weight | 0.188g |
| Width | 3.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
