The IRFN214BTA_FP001 is a TO-92-3 packaged N-CHANNEL transistor from Onsemi. It features a continuous drain current of 600mA and a drain to source breakdown voltage of 250V. The device has a maximum power dissipation of 1.8W and can operate within a temperature range of -55°C to 150°C. The transistor is RoHS compliant and suitable for through hole mounting.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
Onsemi IRFN214BTA_FP001 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 275pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFN214BTA_FP001 Datasheet
Download the complete datasheet for Onsemi IRFN214BTA_FP001 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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