The IRFR110ATF is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 100V and a continuous drain current of 4.7A. It has a drain to source resistance of 400mR and a power dissipation of 20W. The device is packaged in a DPAK and is RoHS compliant. It operates over a temperature range of -55°C to 150°C, with a fall time of 18ns and a turn-off delay time of 28ns.
PackageDPAK
PolarityN-CHANNEL
Power20W
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Technical Specifications
Onsemi IRFR110ATF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 400mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFR110ATF Datasheet
Download the complete datasheet for Onsemi IRFR110ATF to view detailed technical specifications.
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