The IRFS450B is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 9.6A. It has a maximum power dissipation of 96W and is packaged in a TO-3PF, 3 PIN package. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IRFS450B has a drain to source resistance of 310mR and a gate to source voltage of 30V.
MountingThrough Hole
PolarityN-CHANNEL
Power96W
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Technical Specifications
Onsemi IRFS450B technical specifications.
General
| Continuous Drain Current (ID) | 9.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 310mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| Radiation Hardening | No |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 45ns |
| Weight | 6.962g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFS450B Datasheet
Download the complete datasheet for Onsemi IRFS450B to view detailed technical specifications.
No datasheet is available for this part.
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