
The IRFS614B_FP001 is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 250V and a continuous drain current of 2.8A. The device has a maximum power dissipation of 22W and is RoHS compliant. It is suitable for high-power applications and can be mounted through a hole.
Onsemi IRFS614B_FP001 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 275pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 22W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi IRFS614B_FP001 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
