The IRFS840B is a high-power N-CHANNEL MOSFET with a breakdown voltage of 500V and a continuous drain current of 8A. It can handle a maximum power dissipation of 44W and operates within a temperature range of -55°C to 150°C. The device is available in a rail/Tube packaging configuration with 50 units per package. It is compliant with RoHS regulations.
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Onsemi IRFS840B technical specifications.
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 650mR |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 125ns |
| RoHS | Compliant |
