The IRFW640BTM_FP001 is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 18A and a drain to source breakdown voltage of 200V. The device is packaged in a TO-263 case and is available in quantities of 800. The IRFW640BTM_FP001 is RoHS compliant and suitable for use in high-temperature applications. The MOSFET's drain to source resistance is 145mR, and it has a fall time of 110ns and a turn-off delay time of 145ns.
PackageTO-263
PolarityN-CHANNEL
Power3.13W
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Technical Specifications
Onsemi IRFW640BTM_FP001 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 145mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 145ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFW640BTM_FP001 Datasheet
Download the complete datasheet for Onsemi IRFW640BTM_FP001 to view detailed technical specifications.
No datasheet is available for this part.