Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Onsemi IRFW644BTM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 250V |
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
