The IRFW710BTM is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2A and a drain to source breakdown voltage of 400V. The device is packaged in a TO-263 package and is RoHS compliant. The MOSFET has a drain to source resistance of 3.4R and a power dissipation of 3.13W.
PackageTO-263
PolarityN-CHANNEL
Power3.13W
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Technical Specifications
Onsemi IRFW710BTM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 3.4R |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRFW710BTM Datasheet
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