The IRFW820BTM is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 500V and a Continuous Drain Current of 2.5A. It features a Drain to Source Resistance of 2.6 ohms and a Fall Time of 35ns. The device is packaged in a D2PAK and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageD2PAK
PolarityN-CHANNEL
Power3.13W
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Technical Specifications
Onsemi IRFW820BTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.6R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 750 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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