N-channel power MOSFET featuring a 200V drain-source breakdown voltage and 18A continuous drain current. This logic-level MOSFET offers a low 180mΩ drain-source on-resistance at a nominal gate-source voltage of 2V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns fall time, 11ns turn-on delay, and 46ns turn-off delay.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi IRL640A technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
180mR
Element Configuration
Single
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
16.3mm
Input Capacitance
1.705nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Nominal Vgs
2V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
46ns
Turn-On Delay Time
11ns
DC Rated Voltage
200V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi IRL640A Datasheet
Download the complete datasheet for Onsemi IRL640A to view detailed technical specifications.
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