ONSEMI

IRLM110ATF

Datasheet

N-CH MOSFET 100V 1.5A SOT-223 440mR RdsOn

Onsemi

IRLM110ATF

Name: IRLM110ATF Onsemi
Brand: Onsemi
SKU: IRLM110ATF

N-CH MOSFET 100V 1.5A SOT-223 440mR RdsOn

N-channel MOSFET, 100V Drain-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Features a maximum Drain-Source On Resistance (Rds On) of 440mΩ at a nominal 2V Gate-Source Voltage (Vgs). This surface-mount component, housed in a SOT-223 package, offers a maximum power dissipation of 2.2W and operates within a temperature range of -55°C to 150°C. It includes an input capacitance of 235pF and fall time of 8ns.

PackageSOT-223

Current Rating1.5A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi IRLM110ATF technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	1.5A
Current Rating	1.5A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	440mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	44MR
Element Configuration	Single
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	235pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.2W
Mount	Surface Mount
Nominal Vgs	2V
Package Quantity	4000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.2W
Rds On Max	440mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	17ns
DC Rated Voltage	100V
Weight	0.188g