
N-channel MOSFET, 100V Drain-Source Voltage (Vdss) and 1.5A Continuous Drain Current (ID). Features a maximum Drain-Source On Resistance (Rds On) of 440mΩ at a nominal 2V Gate-Source Voltage (Vgs). This surface-mount component, housed in a SOT-223 package, offers a maximum power dissipation of 2.2W and operates within a temperature range of -55°C to 150°C. It includes an input capacitance of 235pF and fall time of 8ns.
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Onsemi IRLM110ATF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | 1.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 44MR |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| DC Rated Voltage | 100V |
| Weight | 0.188g |
| RoHS | Compliant |
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